600 Nanometer
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600 Nanometer

The 600 nanometer (600 nm) process refers to the level of CMOS (MOSFET) semiconductor fabrication process technology that was commercialized around the 1990-1995 timeframe, by leading semiconductor companies like Mitsubishi Electric, Toshiba, NEC, Intel and IBM.


A MOSFET device with a 500nm NMOS channel length was fabricated by a research team led by Robert H. Dennard, Hwa-Nien Yu and F.H. Gaensslen at the IBM T.J. Watson Research Center in 1974.[1] A CMOS device with a 500nm NMOS channel length and 900nm PMOS channel length was fabricated by Tsuneo Mano, J. Yamada, Junichi Inoue and S. Nakajima at Nippon Telegraph and Telephone (NTT) in 1983.[2][3]

A CMOS device with 500nm channel length was fabricated by an IBM T.J. Watson Research Center team led by Hussein I. Hanafi and Robert H. Dennard in 1987.[4] Commercial 600nm CMOS memory chips were manufactured by Mitsubishi Electric, Toshiba and NEC in 1989.[5]

Products featuring 0.6 µm manufacturing process


  1. ^ Dennard, Robert H.; Yu, Hwa-Nien; Gaensslen, F. H.; Rideout, V. L.; Bassous, E.; LeBlanc, A. R. (October 1974). "Design of ion-implanted MOSFET's with very small physical dimensions" (PDF). IEEE Journal of Solid-State Circuits. 9 (5): 256-268. doi:10.1109/JSSC.1974.1050511.
  2. ^ Gealow, Jeffrey Carl (10 August 1990). "Impact of Processing Technology on DRAM Sense Amplifier Design" (PDF). CORE. Massachusetts Institute of Technology. pp. 149-166. Retrieved 2019.
  3. ^ Mano, Tsuneo; Yamada, J.; Inoue, Junichi; Nakajima, S. (1983). "Submicron VLSI memory circuits". 1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. XXVI: 234-235. doi:10.1109/ISSCC.1983.1156549.
  4. ^ Hanafi, Hussein I.; Dennard, Robert H.; Haddad, Nadim F.; Taur, Yuan; Sun, J. Y. C.; Rodriguez, M. D. (September 1987). "0.5 ?m CMOS Device Design and Characterization". ESSDERC '87: 17th European Solid State Device Research Conference: 91-94.
  5. ^ a b c d "Memory". STOL (Semiconductor Technology Online). Retrieved 2019.

Preceded by
800 nm
CMOS manufacturing processes Succeeded by
350 nm

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